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TGF4230-SCC

Model Number: TGF4230-SCC

RF Power Transistor from Qorvo

RF Power Transistor, 0 to 12 GHz, 800 mW, 10 dB, 8 V, , 0.61 X 0.74 X 0.1 mm

Status: Discontinued | Datasheet: Request Data Sheet | RoHS Compliance: Rohs Compliant

The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation. Bond pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. The TGF4230-SCC is readily assembled using automatic equipment.

Features:

Nominal Pout of 28.5 dBm at 8.5 GHz

Nominal gain of 10.0 dB at 8.5 GHz

Nominal PAE of 55 % at 8.5 GHz

1200 um HFET

Bias at 8 V, 96 mA

Dimensions: 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x 0.004 in)

Part Number: TGF4230-SCC
Manufacturer: Qorvo
Frequency Min: 0 GHz
Frequency Max: 12 GHz
Output Power: 0.8 W
Gain: 10 dB
% Typ Efficiency: 55
Supply Voltage: 8 V
Id: 96 mA
Package: DIE
Type: RF Power Discrete Transistors

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Product Specifications For TGF4230-SCC RF Power Transistor

Part Number: TGF4230-SCC Manufacturer: Qorvo Product Description: RF Power Transistor, 0 to 12 GHz, 800 mW, 10 dB, 8 V, , 0.61 X 0.74 X 0.1 mm

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TGF4230-SCC

RF Power Transistor from Qorvo

RF Power Transistor, 0 to 12 GHz, 800 mW, 10 dB, 8 V, , 0.61 X 0.74 X 0.1 mm

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TGF4230-SCC

RF Power Transistor from Qorvo

RF Power Transistor, 0 to 12 GHz, 800 mW, 10 dB, 8 V, , 0.61 X 0.74 X 0.1 mm

Technical Inquiry Request for TGF4230-SCC RF Power Transistor

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