RFMW

Status: Discontinued | Datasheet: Request Data Sheet   | RoHS Compliance: Rohs Compliant
The TriQuint TGF4240-SCC is a single gate 2.4 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation. Typical performance at 8.5 GHz is 31.5 dBm power output, 10 dB Gain and 56% PAE. Bond pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. The TGF4240-SCC is readily assembled using automatic equipment.

Features:
  • Frequency range: DC to 12 GHz
  • 2400 um x 0.5 um HFET
  • Nominal Pout of 31.5 dBm at 8.5 GHz
  • Nominal gain of 10.0 dB at 8.5 GHz
  • Nominal PAE of 56 % at 8.5 GHz
  • Suitable for high reliability applications
  • Dimensions: 0.6 x 1.0 x 0.1 mm (0.024 x 0.040 x 0.004 in)
    • Part Number:
    TGF4240-SCC
    Manufacturer:
    Qorvo
    Frequency Min:
    0 GHz
    Frequency Max:
    12 GHz
    Output Power:
    1 W
    Gain:
    10 dB
    % Typ Efficiency:
    56
    Supply Voltage:
    8 V
    Id:
    192 mA
    Package:
    DIE
    Type:
    RF Power Discrete Transistors
    No Content Available

    Technical Inquiry Request for TGF4240-SCC RF Power Transistor

    Fields marked with * are required.
    Product Specifications For TGF4240-SCC RF Power Transistor
    Design Information
    Contact Information


    Availability
    In Stock
    0
    Need products sooner?
    Pricing
    Pricing Available Upon Request. Request a Pricing Quote
    Product Notices
    No Current Notices