RFMW

Status: Discontinued | Datasheet: Request Data Sheet   | RoHS Compliance: Rohs Compliant
The TriQuint TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34 dBm power output, 13 dB gain and 53% PAE. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. The TGF4250-SCC is readily assembled using automatic equipment.

Features:
  • Nominal Pout of 34 dBm at 8.5 GHz
  • Nominal gain of 8.5 dB at 8.5 GHz
  • Nominal PAE of 53% at 8.5 GHz
  • Suitable for high reliability applications
  • 4800 um x 0.5 um FET
  • Bias at 8 V, 384 mA
  • Chip dimensions: 0.61 x 1.37 x 0.1 mm (0.024 x 0.054 x 0.004 in)
    • Part Number:
    TGF4250-SCC
    Manufacturer:
    Qorvo
    Frequency Min:
    0 GHz
    Frequency Max:
    10.5 GHz
    Output Power:
    2.5 W
    Gain:
    8.5 dB
    % Typ Efficiency:
    53
    Supply Voltage:
    8 V
    Id:
    384 mA
    Package:
    DIE
    Type:
    RF Power Discrete Transistors
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