RFMW

Status: Discontinued | Datasheet: Request Data Sheet   | RoHS Compliance: Rohs Compliant
The TriQuint TGF4260-SCC is a single gate 9.6 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 6 GHz is 37dBm power output, 9.5 dB Gain, and 52% PAE. Bond pad and backside metallization are gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes.

Features:
  • Frequency range: DC to 10.5 GHz
  • 9600 um x 0.5 um HFET
  • Nominal Pout of 37 dBm at 6 GHz
  • Nominal gain of 9.5 dB at 6 GHz
  • Nominal PAE of 52% at 6 GHz
  • Suitable for high reliability applications
  • Dimensions: 0.6 x 2.4 x 0.1 mm (0.024 x 0.093 x 0.004 in)
    • Part Number:
    TGF4260-SCC
    Manufacturer:
    Qorvo
    Frequency Min:
    0 GHz
    Frequency Max:
    10.5 GHz
    Output Power:
    5 W
    Gain:
    9.5 dB
    % Typ Efficiency:
    52
    Supply Voltage:
    8.5 V
    Id:
    768 mA
    Package:
    DIE
    Type:
    RF Power Discrete Transistors
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