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AFT31150NR5

RF Power Transistor from NXP

RF Power Transistor, 2.7 to 3.1 GHz, 150 W, Typ Gain in dB is 17 @ 3100 MHz, 32 V, SOT1693-1, LDMOS

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET

This RF power transistor is designed for applications operating at frequencies between 2700 and 3100 MHz. This device is suitable for use in pulse applications.

Features
- Characterized with series equivalent large--signal impedance parameters
- Internally matched for ease of use
- Qualified up to a maximum of 32 VDD operation
- Integrated ESD protection
- Greater negative gate--source voltage range for improved Class C operation
- Recommended driver: AFIC31025N (25 W)
- Included in NXP product longevity program with assured supply for a minimum of 15 years after launch
Typical Applications
- Commercial S-Band radar systems
- Maritime radar
- Weather radar

Part Number: AFT31150NR5
Manufacturer: NXP
Frequency Min: 2.7 GHz
Frequency Max: 3.1 GHz
Output Power: 150 W
Gain: 17 dB
% Typ Efficiency: 50
Supply Voltage: 32 V
Package: SOT1693-1
Process: LDMOS
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Complementary Product	AFIC31025NR1 NXP	RF Power Transistor, 2.3 to 2.69 GHz, 2.5 W, 28 V, SOT1730-1, LDMOS
Complementary Product	MMZ38333BT1 NXP	Amplifier, 3.4 to 3.8 GHz, 31.7 dBm, Typ Gain in dB is 37.9 @ 3.6 GHz, 5 V, QFN 24, InGaP

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Product Specifications For AFT31150NR5 RF Power Transistor

Part Number: AFT31150NR5 Manufacturer: NXP Product Description: RF Power Transistor, 2.7 to 3.1 GHz, 150 W, Typ Gain in dB is 17 @ 3100 MHz, 32 V, SOT1693-1, LDMOS

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AFT31150NR5

RF Power Transistor from NXP

RF Power Transistor, 2.7 to 3.1 GHz, 150 W, Typ Gain in dB is 17 @ 3100 MHz, 32 V, SOT1693-1, LDMOS

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AFT31150NR5

RF Power Transistor from NXP

RF Power Transistor, 2.7 to 3.1 GHz, 150 W, Typ Gain in dB is 17 @ 3100 MHz, 32 V, SOT1693-1, LDMOS

Technical Inquiry Request for AFT31150NR5 RF Power Transistor

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