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BLF10M6200U

RF Power Transistor from Ampleon

RF Power Transistor, 700 - 1000 MHz, 200 W, 20 dB, 28 V, LDMOS, SOT502A

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz.

Features and benefits

Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (700 MHz to 1000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)

Part Number: BLF10M6200U
Manufacturer: Ampleon
Frequency Min: 0.7 GHz
Frequency Max: 1 GHz
Output Power: 200 W
Gain: 20 dB
% Typ Efficiency: 28.5
Supply Voltage: 28 V
Id: 1400 mA
Package: SOT-502A
Process: LDMOS
Type: RF Power Discrete Transistors

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Product Specifications For BLF10M6200U RF Power Transistor

Part Number: BLF10M6200U Manufacturer: Ampleon USA Inc. Product Description: RF Power Transistor, 700 - 1000 MHz, 200 W, 20 dB, 28 V, LDMOS, SOT502A

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Description	Units Per Format	Available

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BLF10M6200U

RF Power Transistor from Ampleon

RF Power Transistor, 700 - 1000 MHz, 200 W, 20 dB, 28 V, LDMOS, SOT502A

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BLF10M6200U

RF Power Transistor from Ampleon

RF Power Transistor, 700 - 1000 MHz, 200 W, 20 dB, 28 V, LDMOS, SOT502A

Features and benefits

Technical Inquiry Request for BLF10M6200U RF Power Transistor

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