Microsemi's MMA053AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distributed power amplifier die that operates between DC and 8 GHz. The amplifier provides 17 dB of gain, +43 dBm output IP3, and +31 dBm of output power at 3 dB compression, while requiring only 410 mA from a 11 V supply. Gain flatness over the DC to 8 GHz frequency range varies by only ±0.5 dB, making the MMA053AA die ideal for EW, ECM, radar, and test equipment applications. The MMA053AA amplifier features compact die size and I/Os that are internally matched to 50 Ohm, facilitating easy integration into multi-chip modules (MCMs).
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Part Number:
MMA053AA
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Manufacturer:
Microchip
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Type:
Die Amplifiers
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Frequency Min:
0 GHz
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Frequency Max:
8 GHz
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P1dB:
29 dBm
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Gain:
17 dB
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Supply Voltage \ Vd Max:
11 V
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Quiescent Current \ Id:
420 mA
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Noise Figure:
4 dB
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Package:
DIE
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Process:
GaAs
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| Description | Units Per Format | Available |
| Description | Units Per Format | Available |