FPD750SOT89E

Transistors from Qorvo

Transistor, Low Noise, 0.7 to 5 GHz, 24 dBm, 20 dB, 5 V, SOT-89, AlGaAs/InGaAs

FPD750SOT89E
Transistor, Low Noise, 0.7 to 5 GHz, 24 dBm, 20 dB, 5 V, SOT-89, AlGaAs/InGaAs

Manufacturer:	Qorvo
Status:	Discontinued
Data Sheet:	Request Data Sheet
RoHS Compliance:	Yes

Specifications
Part Number: FPD750SOT89E
Manufacturer: Qorvo
Status: Discontinued
Datasheet: Request Data Sheet
RoHS Compliance: Yes
Frequency Min: 0.7 GHz
Frequency Max: 5 GHz
Output Power: 24 dBm
Gain: 20 dB
Package: SOT-89
% Typ Efficiency: 55
Supply Voltage: 5 V
Id: 100 mA
Noise Figure: 0.8 dB
Material: AlGaAs/InGaAs

Specifications

Part Number:

FPD750SOT89E

Manufacturer:

Qorvo

Status:

Discontinued

Datasheet:

Request Data Sheet

RoHS Compliance:

Yes

Frequency Min:

0.7 GHz

Frequency Max:

5 GHz

Output Power:

24 dBm

Gain:

20 dB

Package:

SOT-89

% Typ Efficiency:

Supply Voltage:

5 V

Id:

100 mA

Noise Figure:

0.8 dB

Material:

AlGaAs/InGaAs

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6.  TERMINATION. You may terminate this Agreement and the license granted herein at any time by destroying or removing from all computers, networks, and storage media all copies of the Software. Company may terminate this Agreement and the license granted herein immediately if you breach any provision of this Agreement. Upon receiving notice of termination from Company you will destroy or remove from all computers, networks, and storage media all copies of the Software. Sections 2 through 7 shall survive termination of this Agreement.
7.  MISCELLANEOUS. You shall comply with all applicable export laws, restrictions and regulations in connection with your use of the Software, and will not export or re-export the Software in violation thereof. This Agreement is personal to you and you shall not assign or transfer the Agreement or the Software to any third party under any circumstances; Company may assign or transfer this Agreement without consent. This Agreement represents the complete agreement concerning this license between the parties and supersedes all prior agreements and representations between them. It may be amended only by a writing executed by both parties. If any provision of this Agreement is held to be unenforceable for any reason, such provision shall be reformed only to the extent necessary to make it enforceable. This Agreement shall be governed by and construed under California without regard to any conflicts of law provisions thereof.

NOT FOR NEW DESIGNS The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It features a 0.25μmx1500μm Schottky barrier gate defined by high-resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure is designed for improved linearity over a range of bias conditions and input power levels.

Features:

25dBm Output Power (P1dB)

18dB Small-Signal Gain (SSG)

0.6dB Noise Figure

39dBm OIP3

55% Power-Added Efficiency

FPD750SOT89E: RoHS Compliant (Directive 2002/95/EC)

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FPD750SOT89E

Transistors from Qorvo

Transistor, Low Noise, 0.7 to 5 GHz, 24 dBm, 20 dB, 5 V, SOT-89, AlGaAs/InGaAs

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FPD750SOT89E

Transistors from Qorvo

Transistor, Low Noise, 0.7 to 5 GHz, 24 dBm, 20 dB, 5 V, SOT-89, AlGaAs/InGaAs

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