RF3189

The RF3189 is a high power, high linearity performance in EDGE mode, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, which is designed to operate either in saturated mode for GMSK signaling or linear mode for 8PSK signaling. The module is designed to be the final amplification stage in a dual-mode GSM/EDGE mobile transmit lineup operating in the 824MHz to 915MHz (low) and 1710MHz to 1910MHz (high) bands (such as a cellular handset). Band selection is controlled by an input on the module which selects either the low or high band. The device is packaged on a 5mm x 5mm laminate module with a protective plastic over-mold. The RF3189 provides excellent ESD protection at all the pins. The RF3189 also provides integrated V RAMP rejection filter which improves noise performance and transient spectrum.

Features:

• Linear EDGE and GSM Operation
• High Gain for use in Systems with Low RF Driver Power
• Typical GMSK Efficiency GSM850/900 48/53% DCS/PCS 50/53%
• Auto V_BATT Tracking Circuit avoids Switching Transients at Low Supply Voltage
• Low Power Mode for Reduced EDGE Current
• Digital Bias Control: Simple Implementation of Low Power Mode
• Integrated Power Flattening Circuit Reduces Power and Current into Mismatch
• Integrated V_RAMP Rejection Filter Eliminates External Components