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2N4429

2N Transistors from P1dB

RF Power Transistor, up to 1 GHz, 1 W, 7 dB, 28 V, BiPolar, Ceramic

Status: Standard | Datasheet: Request Data Sheet | RoHS Compliance:

Part Number: 2N4429
Manufacturer: P1dB
Frequency Max: 1 GHz
Output Power: 1 W
Gain: 7 dB
Supply Voltage: 28 V
Package: Ceramic
Process: BiPolar
Type: RF Power Discrete Transistors

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Product Specifications For 2N4429 RF Power Transistor

Part Number: 2N4429 Manufacturer: P1dB Product Description: RF Power Transistor, up to 1 GHz, 1 W, 7 dB, 28 V, BiPolar, Ceramic

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Description	Units Per Format	Available

Description	Units Per Format	Available

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2N4429

2N Transistors from P1dB

RF Power Transistor, up to 1 GHz, 1 W, 7 dB, 28 V, BiPolar, Ceramic

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2N4429

2N Transistors from P1dB

RF Power Transistor, up to 1 GHz, 1 W, 7 dB, 28 V, BiPolar, Ceramic

Technical Inquiry Request for 2N4429 RF Power Transistor

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About RFMW