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A3G26D055NT4

RF Power Transistor from NXP

RF Power Transistor, 0.10 to 2.69 GHz, 8 W Avg., 18 dB, 48 V, DFN 7 x 6.5, GaN

Status: Featured | Data Sheet:

| RoHS Compliance: Rohs Compliant

The Airfast GaN A3G26D055N is a versatile 55 W peak GaN discrete transistor housed in compact DFN 7 x 6.5 mm over molded plastic package. The A3G26D055N can be used in a wide range of applications from 100 to 2800 MHz, including Cellular Infrastructure, RF Energy and Wideband Communications.

5G Applications:
64T64R 5G mMIMO radio units
Driver for macro radio units

RF Energy Applications:
Cooking
Industrial Heating/Welding
Medical
Industrial

Wideband Applications:
Tactical Communications

Part Number: A3G26D055NT4
Manufacturer: NXP
Frequency Min: 0.1 GHz
Frequency Max: 2.69 GHz
Gain: 18 dB
% Typ Efficiency: 54.1
Supply Voltage: 48 V
Package: DFN 7 x 6.5
Process: GaN
Avg Power: 8 W
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	A3G26D055N-100 NXP	Evaluation Board for A3G26D055N, 0.10 to 2.5 GHz
Evaluation Board	A3G26D055N-1805 NXP	Evaluation Board for A3G26D055N, 1.805 to 1.880 GHz
Evaluation Board	A3G26D055N-2110 NXP	Evaluation Board for A3G26D055N, 2.11 to 2.2 GHz
Evaluation Board	A3G26D055N-2400 NXP	Evaluation Board for A3G26D055N, 2.4 to 2.5 GHz
Evaluation Board	A3G26D055N-2515 NXP	Evaluation Board for A3G26D055N, 2.515 to 2.675 GHz
Evaluation Board	A3G26D055N-2600 NXP	Evaluation Board for A3G26D055N, 2.6 GHz
Complementary Product	A3G18H500-04SR3 NXP	RF Power Transistor, 1805 to 2200 MHz, 107 W Avg., 48 V, LDMOS
Complementary Product	A3V07H600-42NR6 NXP	RF Power Transistor, 616 to 870 MHz, 112 W Avg., 48 V, LDMOS
Complementary Product	A3V26S004NT6 NXP	RF Power Transistor, 2496 to 2690 MHz, 26 dBm Avg., 23 dB, 48 V, DFN 4.5 x4, LDMOS
Complementary Product	MMRF5018HSR5 NXP	RF Power Transistor, 0.001 to 2.7 GHz, 125 W, 12 dB, 50 V, GaN
Complementary Product	MMZ09312BT1 NXP	Amplifier, 0.40 to 1.0 GHz, 29.6 dBm, Typ Gain in dB is 31.7 @ 900 MHz, 3 to 5 V, SOT1677-1, InGaP
Complementary Product	MRF24G300HSR5 NXP	RF Power Transistor, 2.4 to 2.5 GHz, 300 W CW, Typ Gain in dB is 15.2 @ 2450 MHz, 50 V, NI-780S-4L, GaN

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Product Specifications For A3G26D055NT4 RF Power Transistor

Part Number: A3G26D055NT4 Manufacturer: NXP Product Description: RF Power Transistor, 0.10 to 2.69 GHz, 8 W Avg., 18 dB, 48 V, DFN 7 x 6.5, GaN

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A3G26D055NT4

RF Power Transistor from NXP

RF Power Transistor, 0.10 to 2.69 GHz, 8 W Avg., 18 dB, 48 V, DFN 7 x 6.5, GaN

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A3G26D055NT4

RF Power Transistor from NXP

RF Power Transistor, 0.10 to 2.69 GHz, 8 W Avg., 18 dB, 48 V, DFN 7 x 6.5, GaN

Technical Inquiry Request for A3G26D055NT4 RF Power Transistor

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