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A5G35H120NT2

RF Power Transistor from NXP

RF Power Transistor, 3.3 to 3.7 GHz, 18 W Avg., 15 dB, 48 V, DFN 7 x 10, GaN

Status: Featured | Data Sheet:

| RoHS Compliance: Rohs Compliant

Part Number: A5G35H120NT2
Manufacturer: NXP
Frequency Min: 3.3 GHz
Frequency Max: 3.7 GHz
Gain: 15 dB
% Typ Efficiency: 56
Supply Voltage: 48 V
Package: DFN 7 x10
Process: GaN
Avg Power: 18 W
Type: RF Power Discrete Transistors

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Product Specifications For A5G35H120NT2 RF Power Transistor

Part Number: A5G35H120NT2 Manufacturer: NXP Product Description: RF Power Transistor, 3.3 to 3.7 GHz, 18 W Avg., 15 dB, 48 V, DFN 7 x 10, GaN

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Description	Units Per Format	Available

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A5G35H120NT2

RF Power Transistor from NXP

RF Power Transistor, 3.3 to 3.7 GHz, 18 W Avg., 15 dB, 48 V, DFN 7 x 10, GaN

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A5G35H120NT2

RF Power Transistor from NXP

RF Power Transistor, 3.3 to 3.7 GHz, 18 W Avg., 15 dB, 48 V, DFN 7 x 10, GaN

Technical Inquiry Request for A5G35H120NT2 RF Power Transistor

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