A5M35TG140TC-EVB

NXP’s RF top-side cooling technology enables thinner and lighter 5G massive MIMO radios, removing the need of the dedicated RF shield and separating thermal management from RF design. NXP’s first family of top-side cooled devices are designed for 64T64R ( 320 W) or 32T32R (200 W) mMIMO radios covering 3.3 GHz to 3.8 GHz. These modules combine NXP’s internal LDMOS and GaN semiconductor technologies to enable high gain and efficiency with wideband performance, delivering 31 dB gain and 46 percent efficiency over 400 MHz of instantaneous bandwidth.

These NXP GaN multi-chip evaluation boards are designed for the thin MIMO module series whose top-side cooling technology helps reduce the thickness and weight of the overall radio by more than 30 percent, while simplifying the design and manufacturing process.