Part number A5M35TG140-TCT1 Product Type Amplifier from Manufacturer NXP

Status: Featured | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant

The A5M35TG140−TC is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field−proven LDMOS and GaN on SiC power amplifiers are designed for TDD LTE and 5G systems.

Features: 

  • 3.4 to 3.6 GHz, 10.5 Watt Average, 30 dB, 48 V, 14 x 10 mm Module 
  • 2−stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier
  • Advanced high performance in−package Doherty
  • Thermal path is separated from electrical/solder connection path for enhanced thermal dissipation
  • Fully matched (50 ohm input/output, DC blocked)
  • Designed for low complexity digital linearization systems
  • Reduced memory effects for improved linearized error vector magnitude
Part Number:
A5M35TG140-TCT1
Manufacturer:
NXP
Type:
Amplifiers
Frequency Min:
3.4 GHz
Frequency Max:
3.6 GHz
Gain:
30 dB
Supply Voltage \ Vd Max:
48 V
Power Added Efficiency:
47 %
Process:
GaN on SiC
P3dB:
49.4 dBm
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