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AFT27S006NT1

RF Power Transistor from NXP

RF Power Transistor, 0.10 to 3.6 GHz, 6 W, Typ Gain in dB is 22.5 @ 2170 MHz, 28 V, LDMOS, SOT1811-2

Status: No new designs | Data Sheet:

| RoHS Compliance: Rohs Compliant

Part Number: AFT27S006NT1
Manufacturer: NXP
Frequency Min: 0.1 GHz
Frequency Max: 3.6 GHz
Output Power: 6 W
Gain: 22.5 dB
% Typ Efficiency: 20.2
Supply Voltage: 28 V
Package: SOT1811-2
Process: LDMOS
Avg Power: 0.76 W
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	AFT27S006N/RFPOWERDEMO NXP	Evaluation Board for AFT27S006N

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Product Specifications For AFT27S006NT1 RF Power Transistor

Part Number: AFT27S006NT1 Manufacturer: NXP Product Description: RF Power Transistor, 0.10 to 3.6 GHz, 6 W, Typ Gain in dB is 22.5 @ 2170 MHz, 28 V, LDMOS, SOT1811-2

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AFT27S006NT1

RF Power Transistor from NXP

RF Power Transistor, 0.10 to 3.6 GHz, 6 W, Typ Gain in dB is 22.5 @ 2170 MHz, 28 V, LDMOS, SOT1811-2

Technical Inquiry Request for AFT27S006NT1 RF Power Transistor

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AFT27S006NT1

RF Power Transistor from NXP

RF Power Transistor, 0.10 to 3.6 GHz, 6 W, Typ Gain in dB is 22.5 @ 2170 MHz, 28 V, LDMOS, SOT1811-2

Technical Inquiry Request for AFT27S006NT1 RF Power Transistor

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