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AFT27S010NT1

RF Power Transistor from NXP

RF Power Transistor,100 to 3600 MHz, 10 W, Typ Gain in dB is 21.7 @ 2170 MHz, 28 V, LDMOS, SOT1811

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

Part Number: AFT27S010NT1
Manufacturer: NXP
Frequency Min: 0.1 GHz
Frequency Max: 3.6 GHz
Output Power: 10 W
Gain: 21.7 dB
% Typ Efficiency: 22.6
Supply Voltage: 28 V
Package: SOT1811
Process: LDMOS
Avg Power: 1.26 W
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	AFT27S010N/RFPOWERDEMO NXP	Evaluation Board for AFT27S010N
Replacement	A5G35S004NT6 NXP	RF Power Transistor, 3.4 to 4.3 GHz, 24.5 dBm, 18 dB, 48 V, DFN 4.5 x 4, GaN

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Product Specifications For AFT27S010NT1 RF Power Transistor

Part Number: AFT27S010NT1 Manufacturer: NXP Product Description: RF Power Transistor,100 to 3600 MHz, 10 W, Typ Gain in dB is 21.7 @ 2170 MHz, 28 V, LDMOS, SOT1811

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Description	Units Per Format	Available

Replacement Part(s) Suggested

The part AFT27S010NT1 is discontinued, below is the suggested replacement part.

Part Number	Manufacturer	Description
A5G35S004NT6	NXP	RF Power Transistor, 3.4 to 4.3 GHz, 24.5 dBm, 18 dB, 48 V, DFN 4.5 x 4, GaN

Description	Units Per Format	Available

The part AFT27S010NT1 is discontinued, would you like to check out the suggested replacement part?

Part Function	Part Number	Description
Replacement	A5G35S004NT6 NXP	RF Power Transistor, 3.4 to 4.3 GHz, 24.5 dBm, 18 dB, 48 V, DFN 4.5 x 4, GaN

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AFT27S010NT1

RF Power Transistor from NXP

RF Power Transistor,100 to 3600 MHz, 10 W, Typ Gain in dB is 21.7 @ 2170 MHz, 28 V, LDMOS, SOT1811

Technical Inquiry Request for AFT27S010NT1 RF Power Transistor

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AFT27S010NT1

RF Power Transistor from NXP

RF Power Transistor,100 to 3600 MHz, 10 W, Typ Gain in dB is 21.7 @ 2170 MHz, 28 V, LDMOS, SOT1811

Technical Inquiry Request for AFT27S010NT1 RF Power Transistor

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