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AFT27S010NT1

RF Power Transistor from NXP

RF Power Transistor,100 to 3600 MHz, 10 W, Typ Gain in dB is 21.7 @ 2170 MHz, 28 V, LDMOS, SOT1811

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

Part Number: AFT27S010NT1
Manufacturer: NXP
Frequency Min: 0.1 GHz
Frequency Max: 3.6 GHz
Output Power: 10 W
Gain: 21.7 dB
% Typ Efficiency: 22.6
Supply Voltage: 28 V
Package: SOT1811
Process: LDMOS
Avg Power: 1.26 W
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	AFT27S010N/RFPOWERDEMO NXP	Evaluation Board for AFT27S010N
Replacement	A5G35S004NT6 NXP	RF Power Transistor, 3.4 to 4.3 GHz, 24.5 dBm, 18 dB, 48 V, DFN 4.5 x 4, GaN

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Product Specifications For AFT27S010NT1 RF Power Transistor

Part Number: AFT27S010NT1 Manufacturer: NXP Product Description: RF Power Transistor,100 to 3600 MHz, 10 W, Typ Gain in dB is 21.7 @ 2170 MHz, 28 V, LDMOS, SOT1811

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AFT27S010NT1

RF Power Transistor from NXP

RF Power Transistor,100 to 3600 MHz, 10 W, Typ Gain in dB is 21.7 @ 2170 MHz, 28 V, LDMOS, SOT1811

Technical Inquiry Request for AFT27S010NT1 RF Power Transistor

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AFT27S010NT1

RF Power Transistor from NXP

RF Power Transistor,100 to 3600 MHz, 10 W, Typ Gain in dB is 21.7 @ 2170 MHz, 28 V, LDMOS, SOT1811

Technical Inquiry Request for AFT27S010NT1 RF Power Transistor

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