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AFV121KHR5

RF Power Transistor from NXP

RF Power Transistor,960 to 1215 MHz, 1000 W, Typ Gain in dB is 17.4 @ 1090 MHz, 50 V, LDMOS, SOT1787

Status: No new designs | Data Sheet:

| RoHS Compliance: Rohs Compliant

Part Number: AFV121KHR5
Manufacturer: NXP
Frequency Min: 0.96 GHz
Frequency Max: 1.215 GHz
Output Power: 1000 W
Gain: 17.4 dB
% Typ Efficiency: 52.2
Supply Voltage: 50 V
Package: SOT1787
Process: LDMOS
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	AFV121KH/RFPOWERDEMO NXP	Evaluation Board for AFV121KH

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Product Specifications For AFV121KHR5 RF Power Transistor

Part Number: AFV121KHR5 Manufacturer: NXP Product Description: RF Power Transistor,960 to 1215 MHz, 1000 W, Typ Gain in dB is 17.4 @ 1090 MHz, 50 V, LDMOS, SOT1787

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Description	Units Per Format	Available

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AFV121KHR5

RF Power Transistor from NXP

RF Power Transistor,960 to 1215 MHz, 1000 W, Typ Gain in dB is 17.4 @ 1090 MHz, 50 V, LDMOS, SOT1787

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AFV121KHR5

RF Power Transistor from NXP

RF Power Transistor,960 to 1215 MHz, 1000 W, Typ Gain in dB is 17.4 @ 1090 MHz, 50 V, LDMOS, SOT1787

Technical Inquiry Request for AFV121KHR5 RF Power Transistor

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