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BLF25M612G,112

RF Power Transistor from Ampleon

RF Power Transistor, 2.4 to 2.5 GHz, 12 W, 18 dB, 28 V, SOT975C, LDMOS

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

Part Number: BLF25M612G,112
Manufacturer: Ampleon
Frequency Min: 2.4 GHz
Frequency Max: 2.5 GHz
Output Power: 12 W
Gain: 18 dB
% Typ Efficiency: 58
Supply Voltage: 28 V
Id: 10 mA
Package: SOT-975C
Process: LDMOS
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Complementary Product	32A7208F Smiths Interconnect — EMC	Termination, Flange, 2.4 to 2.5 GHz, 600 W, AIN
Complementary Product	BLF2425M6LS180P,11 Ampleon	RF Power Transistor, 2.4 to 2.5 GHz, 180 W, 13.3 dB, 28 V, SOT539B, LDMOS
Complementary Product	BLF2425M7LS140,112 Ampleon	RF Power Transistor, 2.4 to 2.5 GHz, 140 W, 18.5 dB, 28 V, SOT502B, LDMOS
Complementary Product	BLF2425M7LS250P,11 Ampleon	RF Power Transistor, 2.4 to 2.5 GHz, 250 W, 13 dB, 28 V, LDMOS, SOT-539B

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Product Specifications For BLF25M612G,112 RF Power Transistor

Part Number: BLF25M612G,112 Manufacturer: Ampleon USA Inc. Product Description: RF Power Transistor, 2.4 to 2.5 GHz, 12 W, 18 dB, 28 V, SOT975C, LDMOS

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BLF25M612G,112

RF Power Transistor from Ampleon

RF Power Transistor, 2.4 to 2.5 GHz, 12 W, 18 dB, 28 V, SOT975C, LDMOS

Technical Inquiry Request for BLF25M612G,112 RF Power Transistor

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BLF25M612G,112

RF Power Transistor from Ampleon

RF Power Transistor, 2.4 to 2.5 GHz, 12 W, 18 dB, 28 V, SOT975C, LDMOS

Technical Inquiry Request for BLF25M612G,112 RF Power Transistor

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