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BLF647P,112

RF Power Transistor from Ampleon

RF Power Transistor, 0 to 1.4 GHz, 200 W, 18 dB, 32 V, LDMOS, SOT-1121A

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

Ampleon's 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

Features and benefits

Integrated ESD protection
Excellent ruggedness
Designed for broadband operation (HF to 1500 MHz)
High efficiency
High Power gain
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

Communication transmitter applications in the HF to 1500 MHz frequency range
Industrial applications in the HF to 1500 MHz frequency range

Part Number: BLF647P,112
Manufacturer: Ampleon
Frequency Min: 0 GHz
Frequency Max: 1.4 GHz
Output Power: 200 W
Gain: 18 dB
% Typ Efficiency: 70
Supply Voltage: 32 V
Package: SOT-1121A
Process: LDMOS
Type: RF Power Discrete Transistors

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Product Specifications For BLF647P,112 RF Power Transistor

Part Number: BLF647P,112 Manufacturer: Ampleon USA Inc. Product Description: RF Power Transistor, 0 to 1.4 GHz, 200 W, 18 dB, 32 V, LDMOS, SOT-1121A

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by 5/29/2026

219

by 6/11/2026

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BLF647P,112

RF Power Transistor from Ampleon

RF Power Transistor, 0 to 1.4 GHz, 200 W, 18 dB, 32 V, LDMOS, SOT-1121A

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BLF647P,112

RF Power Transistor from Ampleon

RF Power Transistor, 0 to 1.4 GHz, 200 W, 18 dB, 32 V, LDMOS, SOT-1121A

Features and benefits

Applications

Technical Inquiry Request for BLF647P,112 RF Power Transistor

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