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BLS9G2731L-400U

RF Power Transistor from Ampleon

RF Power Transistor, 2.7 to 3.1 GHz, 400 W, 13 dB, 32 V, SOT502A, LDMOS

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

Ampleon's BLS9G2731L-400U LDMOS S-band radar power transistor offers 400 W applications in the frequency range from
2700 MHz to 3100 MHz.

High efficiency
Excellent ruggedness
Excellent thermal stability
Easy power control
Internally matched for ease of use

Part Number: BLS9G2731L-400U
Manufacturer: Ampleon
Export Status:
Frequency Min: 2.7 GHz
Frequency Max: 3.1 GHz
Output Power: 400 W
Gain: 13 dB
% Typ Efficiency: 46
Supply Voltage: 32 V
Package: SOT502A
Process: LDMOS
Type: RF Power Discrete Transistors

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Product Specifications For BLS9G2731L-400U RF Power Transistor

Part Number: BLS9G2731L-400U Manufacturer: Ampleon USA Inc. Product Description: RF Power Transistor, 2.7 to 3.1 GHz, 400 W, 13 dB, 32 V, SOT502A, LDMOS

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Description	Units Per Format	Available

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BLS9G2731L-400U

RF Power Transistor from Ampleon

RF Power Transistor, 2.7 to 3.1 GHz, 400 W, 13 dB, 32 V, SOT502A, LDMOS

Technical Inquiry Request for BLS9G2731L-400U RF Power Transistor

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BLS9G2731L-400U

RF Power Transistor from Ampleon

RF Power Transistor, 2.7 to 3.1 GHz, 400 W, 13 dB, 32 V, SOT502A, LDMOS

Technical Inquiry Request for BLS9G2731L-400U RF Power Transistor

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