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C4H10P600AY

RF Power Transistor from Ampleon

RF Power Transistor, 0.70 to 1 GHz, 600 W, 18.2 dB, 48 V, OMP780-4F, GaN

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

Ampleon's C4H10P600A is a 600 W GaN packaged asymmetric Doherty power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

Features and benefits:
Excellent digital pre-distortion capability
High efficiency
Designed for broadband operation
Lower output capacitance for improved performance in Doherty applications

Applications:
RF power amplifier for base stations and multi carrier applications in the 700 MHz to 1000 MHz frequency range

Part Number: C4H10P600AY
Manufacturer: Ampleon
Frequency Min: 0.7 GHz
Frequency Max: 1 GHz
Output Power: 600 W
Gain: 18.2 dB
% Typ Efficiency: 61
Supply Voltage: 48 V
Package: OMP-780-4F
Process: GaN
Type: RF Power Discrete Transistors

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Product may be included on Section 301 Tariff List and subject to applicable tariff charges.

Part Function	Part Number	Description
Evaluation Board	C4H10P600A/RFPOWERDEMO Ampleon	Evaluation Board for C4H10P600A

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Product Specifications For C4H10P600AY RF Power Transistor

Part Number: C4H10P600AY Manufacturer: Ampleon USA Inc. Product Description: RF Power Transistor, 0.70 to 1 GHz, 600 W, 18.2 dB, 48 V, OMP780-4F, GaN

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Tariff Notice

Product may be included on Section 301 Tariff List and subject to applicable tariff charges.

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C4H10P600AY

RF Power Transistor from Ampleon

RF Power Transistor, 0.70 to 1 GHz, 600 W, 18.2 dB, 48 V, OMP780-4F, GaN

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C4H10P600AY

RF Power Transistor from Ampleon

RF Power Transistor, 0.70 to 1 GHz, 600 W, 18.2 dB, 48 V, OMP780-4F, GaN

Technical Inquiry Request for C4H10P600AY RF Power Transistor

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