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C4H22P400AYZ

RF Power Transistor from Ampleon

RF Power Transistor, 1.8 to 2.2 GHz, 290 W, 16 dB, 48 V, OMP780, GaN

Status: Standard | Datasheet: Request Data Sheet | RoHS Compliance: Rohs Compliant

Part Number: C4H22P400AYZ
Manufacturer: Ampleon
Frequency Min: 1.8 GHz
Frequency Max: 2.2 GHz
Output Power: 290 W
Gain: 16 dB
% Typ Efficiency: 60.1
Supply Voltage: 48 V
Package: OMP780-4F-1
Process: GaN
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Complementary Product	C4H2327N55PX Ampleon	RF Power Transistor, 2.3 to 2.7 GHz, 50 W, 19.6 dB, 48 V, DFN 7 x 6.5, GaN
Complementary Product	C4H2327N55PZ Ampleon	RF Power Transistor, 2.3 to 2.7 GHz, 50 W, 19.6 dB, 48 V, DFN 7 x 6.5, GaN

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Product Specifications For C4H22P400AYZ RF Power Transistor

Part Number: C4H22P400AYZ Manufacturer: Ampleon USA Inc. Product Description: RF Power Transistor, 1.8 to 2.2 GHz, 290 W, 16 dB, 48 V, OMP780, GaN

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Description	Units Per Format	Available

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C4H22P400AYZ

RF Power Transistor from Ampleon

RF Power Transistor, 1.8 to 2.2 GHz, 290 W, 16 dB, 48 V, OMP780, GaN

Technical Inquiry Request for C4H22P400AYZ RF Power Transistor

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C4H22P400AYZ

RF Power Transistor from Ampleon

RF Power Transistor, 1.8 to 2.2 GHz, 290 W, 16 dB, 48 V, OMP780, GaN

Technical Inquiry Request for C4H22P400AYZ RF Power Transistor

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