RFMW
Part number CLL3H0914L-700U Product Type RF Power Transistor from Manufacturer Ampleon

Status: Standard | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant
L-band internally pre-matched GaN-SiC HEMT

The CLL3H0914L-700 and CLL3H0914LS-700 are 700 W internally pre-matched RF GaN-SiC HEMTs power transistors that are usable in the frequency range from 0.9 GHz to 1.4 GHz. The devices offer excellent efficiency, thermal resistance and ruggedness suitable for short- and long-pulse applications.

Features and Benefits
  • 700 W internally pre-matched GaN-SiC HEMT with frequency range from 0.9 GHz to 1.4 GHz with internal stability network
  • Low thermal resistance
  • Excellent ruggedness
  • High efficiency, short pulse reference designs at 960 MHz to 1215 MHz and 1030 MHz for avionics applications
  • High efficiency, long pulse reference designs at 1.2 GHz to 1.4 GHz
Part Number:
CLL3H0914L-700U
Manufacturer:
Ampleon
Frequency Min:
0.9 GHz
Frequency Max:
1.4 GHz
Output Power:
750 W
Gain:
17 dB
% Typ Efficiency:
65
Supply Voltage:
50 V
Process:
GaN
Type:
RF Power Discrete Transistors
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