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CLS3H2731L-700U

RF Power Transistor from Ampleon

RF Power Transistor, 2.7 to 3.1 GHz, 700 W, 13 dB, 50 V, SOT502A, GaN

Status: Featured | Datasheet: Request Data Sheet | RoHS Compliance: Rohs Compliant

This S-Band GaN HEMT is a high-performance S-Band Radar RF power transistor. The CLS3H2731L-700 and CLS3H2731LS-700 are 700 W internally pre-matched RF GaN HEMT power transistors, with high efficiency, and operating in the 2.7 GHz to 3.1 GHz frequency range. It is capable of long pulse operation and has been tested with 300uS pulse lengths. It is available in both eared (CLS3H2731L-700) and earless (CLS3H2731LS-700) versions. A demo board and test report are available for evaluation.

Part Number: CLS3H2731L-700U
Manufacturer: Ampleon
Export Status:
Frequency Min: 2.7 GHz
Frequency Max: 3.1 GHz
Output Power: 700 W
Gain: 13 dB
% Typ Efficiency: 54
Supply Voltage: 50 V
Package: SOT502A
Process: GaN
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	CLS3H2731L-700/RFPOWERDEMO Ampleon	Evaluation Board for CLS3H2731L-700
Complementary Product	CLF3H0035-100U Ampleon	RF Power Transistor, 0 to 3.5 GHz, 100 W, 15 dB, 50 V,SOT467C, GaN

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Product Specifications For CLS3H2731L-700U RF Power Transistor

Part Number: CLS3H2731L-700U Manufacturer: Ampleon USA Inc. Product Description: RF Power Transistor, 2.7 to 3.1 GHz, 700 W, 13 dB, 50 V, SOT502A, GaN

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CLS3H2731L-700U

RF Power Transistor from Ampleon

RF Power Transistor, 2.7 to 3.1 GHz, 700 W, 13 dB, 50 V, SOT502A, GaN

Technical Inquiry Request for CLS3H2731L-700U RF Power Transistor

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CLS3H2731L-700U

RF Power Transistor from Ampleon

RF Power Transistor, 2.7 to 3.1 GHz, 700 W, 13 dB, 50 V, SOT502A, GaN

Technical Inquiry Request for CLS3H2731L-700U RF Power Transistor

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