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FPD1500SOT89CE

Transistors from Qorvo

Transistor, Low Noise, 0.7 to 4.5 GHz, 27.5 dBm, 17 dB, 5 V, SOT-89, AlGaAs/InGaAs

Status: Discontinued | Datasheet: Request Data Sheet | RoHS Compliance:

NOT FOR NEW DESIGNS The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It features a 0.25μm x 1500μm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure is designed for improved linearity over a range of bias conditions and input power levels.

Features:

27.5dBm Output Power (P1dB)

17dB Small Signal Gain (SSG)

0.9dB Noise Figure

42dBm OIP3

50% Power-Added Efficiency

FPD1500SOT89CE: RoHS Compliant

Part Number: FPD1500SOT89CE
Manufacturer: Qorvo
Frequency Min: 0.7 GHz
Frequency Max: 4.5 GHz
Output Power: 27.5 dBm
Gain: 17 dB
Package: SOT-89
% Typ Efficiency: 50
Supply Voltage: 5 V
Id: 200 mA
Noise Figure: 1 dB
Material: AlGaAs/InGaAs

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Product Specifications For FPD1500SOT89CE Transistors

Part Number: FPD1500SOT89CE Manufacturer: Qorvo Product Description: Transistor, Low Noise, 0.7 to 4.5 GHz, 27.5 dBm, 17 dB, 5 V, SOT-89, AlGaAs/InGaAs

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FPD1500SOT89CE

Transistors from Qorvo

Transistor, Low Noise, 0.7 to 4.5 GHz, 27.5 dBm, 17 dB, 5 V, SOT-89, AlGaAs/InGaAs

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FPD1500SOT89CE

Transistors from Qorvo

Transistor, Low Noise, 0.7 to 4.5 GHz, 27.5 dBm, 17 dB, 5 V, SOT-89, AlGaAs/InGaAs

Technical Inquiry Request for FPD1500SOT89CE Transistors

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