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FPD3000SOT89CE

Transistors from Qorvo

Transistor, 0.5 to 3.5 GHz, 30 dBm, 13 dB, 5 V, SOT-89, AlGaAs/InGaAs

Status: Discontinued | Datasheet: Request Data Sheet | RoHS Compliance: Rohs Compliant

NOT FOR NEW DESIGNS The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It features a 0.25μm x 3000μm Schottky barrier gate defined by high-resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure is designed for improved linearity over a range of bias conditions and input power levels.

Features:

30dBm Output Power (P1dB)

13dB Small-Signal Gain (SSG)

1.3dB Noise Figure

45dBm OIP3

45% Power-Added Efficiency

FPD3000SOT89CE: RoHS Compliant

Part Number: FPD3000SOT89CE
Manufacturer: Qorvo
Frequency Min: 0.5 GHz
Frequency Max: 3.5 GHz
Output Power: 30 dBm
Gain: 13 dB
Package: SOT-89
% Typ Efficiency: 45
Supply Voltage: 5 V
Id: 450 mA
Noise Figure: 1.3 dB
Material: AlGaAs/InGaAs

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Product Specifications For FPD3000SOT89CE Transistors

Part Number: FPD3000SOT89CE Manufacturer: Qorvo Product Description: Transistor, 0.5 to 3.5 GHz, 30 dBm, 13 dB, 5 V, SOT-89, AlGaAs/InGaAs

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FPD3000SOT89CE

Transistors from Qorvo

Transistor, 0.5 to 3.5 GHz, 30 dBm, 13 dB, 5 V, SOT-89, AlGaAs/InGaAs

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FPD3000SOT89CE

Transistors from Qorvo

Transistor, 0.5 to 3.5 GHz, 30 dBm, 13 dB, 5 V, SOT-89, AlGaAs/InGaAs

Technical Inquiry Request for FPD3000SOT89CE Transistors

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