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ICP2840

Amplifier from Microchip

Amplifier -- RF Power MMIC, 27.5GHz, 31GHz, 39.5dBm, 22dB, 20V, 24V, 100 - 224mA, 22%, 22±dB, -15dB, -15dB, GaN on SiC, 3.025mm x 3.405mm x 0.10mm

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

The ICP2840 is a Ka Band MMIC power amplifier fabricated using 0.15µm GaN SiC technology. It achieves 39 dBm saturated output power from 27.5-31GHz, with 22% PAE and 22dB small signal gain. The balanced topology provides excellent broadband input and output match to 50 Ohms, and DC blocking capacitors ensure simple integration. Excellent linearity characteristics make the ICP2840 well suited to applications in Satellite Communications. The die are 100% DC and RF tested on wafer ensuring compliance to the electrical specifications. Evaluation module available upon request.

Part Number: ICP2840
Manufacturer: Microchip
Type: RF Power MMIC
Frequency Min: 27.5 GHz
Frequency Max: 31 GHz
Psat: 39.5 dBm
Gain: 22 dB
Supply Voltage \ Vd Min: 20 V
Supply Voltage \ Vd Max: 24 V
Quiescent Current \ Id: 100 mA
Power Added Efficiency: 22 %
Gain Flatness: 22 ±dB
Return Loss Input: -15 dB
Return Loss Output: -15 dB
Process: GaN on SiC

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Product Specifications For ICP2840 Amplifier

Part Number: ICP2840 Manufacturer: Microchip Product Description: Amplifier -- RF Power MMIC, 27.5GHz, 31GHz, 39.5dBm, 22dB, 20V, 24V, 100 - 224mA, 22%, 22±dB, -15dB, -15dB, GaN on SiC, 3.025mm x 3.405mm x 0.10mm

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ICP2840

Amplifier from Microchip

Amplifier -- RF Power MMIC, 27.5GHz, 31GHz, 39.5dBm, 22dB, 20V, 24V, 100 - 224mA, 22%, 22±dB, -15dB, -15dB, GaN on SiC, 3.025mm x 3.405mm x 0.10mm

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ICP2840

Amplifier from Microchip

Amplifier -- RF Power MMIC, 27.5GHz, 31GHz, 39.5dBm, 22dB, 20V, 24V, 100 - 224mA, 22%, 22±dB, -15dB, -15dB, GaN on SiC, 3.025mm x 3.405mm x 0.10mm

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