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IXRFD630

IXYS RF from IXYS RF

Transistor, RF Power, 20 Ampere Ultrafast MOSFET Driver with Kelvin Connection

Status: Standard | Datasheet: Request Data Sheet | RoHS Compliance: Rohs Compliant

The IXRFD630 is a CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. The IXRFD630 can source and sink 30 A of peak current while producing voltage rise and fall times of less than 4 ns and minimum pulse widths of 8 ns. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction or current shoot-through is virtually eliminated. The features and wide safety margin in operating voltage and power make the IXRFD630 unmatched in performance and value.

The surface mount IXRFD630 is packaged in a low-inductance RF package incorporating advanced layout techniques to minimize stray lead inductances for optimum switching performance.

Part Number: IXRFD630
Manufacturer: IXYS RF

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Part Function	Part Number	Description
Evaluation Board	DVRFD630 150/275 IXYS RF	Development kit for IXRFD630 - DE150 or DE275 MOSFETs
Complementary Product	IXRFD631 IXYS RF	Transistor, RF Power, 30 A Low-Side RF MOSFET Driver

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Product Specifications For IXRFD630 RF Power Transistor

Part Number: IXRFD630 Manufacturer: IXYS RF Product Description: Transistor, RF Power, 20 Ampere Ultrafast MOSFET Driver with Kelvin Connection

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IXRFD630

IXYS RF from IXYS RF

Transistor, RF Power, 20 Ampere Ultrafast MOSFET Driver with Kelvin Connection

Technical Inquiry Request for IXRFD630 RF Power Transistor

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IXRFD630

IXYS RF from IXYS RF

Transistor, RF Power, 20 Ampere Ultrafast MOSFET Driver with Kelvin Connection

Technical Inquiry Request for IXRFD630 RF Power Transistor

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