IXRFD631

The IXRFD631 is a CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. The IXRFD631 is an improved version of the IXRFD630 with a Kelvin ground connection on the input side to allow use of a common mode choke to avoid problems with ground bounce. It can source and sink 30 A of peak current while producing voltage rise and fall times of less than 4 ns and minimum pulse widths of 8 ns. The input of the driver is compatible with +5V or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction or current shoot-through is virtually eliminated. The features and wide safety margin in operating voltage and power make the IXRFD631 unmatched in performance and value.

The surface mount IXRFD631 is packaged in a low-inductance RF package incorporating advanced layout techniques to minimize stray lead inductances for optimum switching performance.