The KCB810 is a high performance, ultra-wideband, medium power GaAs pHEMT amplifier with low noise, high linearity and high efficiency. This device provides excellent linearity and a typical 1 dB Output Compression Point (OP1dB) of +30.3 dBm, making it ideal for use in the driver stage of infrastructure transmit chains. The KCB810 uses an 8-lead Hermetic Surface-Mount Technology (SMT) package for Defense and Satellite application. The device can be supplied and tested to the screening requirements of Mil-PRF-38535 Class B and S, in addition to the required QCI.
Part Number:
KCB810C
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Manufacturer:
Micross — KCB Solutions
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Type:
Amplifiers
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Frequency Min:
0.4 GHz
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Frequency Max:
2.7 GHz
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P1dB:
30.3 dBm
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Gain:
14.5 dB
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IP3:
43 dBm
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Supply Voltage \ Vd Min:
4.75 V
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Supply Voltage \ Vd Max:
5.5 V
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Quiescent Current \ Id:
140 mA
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Noise Figure:
3.8 dB
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Package:
.118x.118x.060
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Return Loss Input:
17 dB
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Return Loss Output:
17 dB
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Process:
pHEMT
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Description | Units Per Format | Available |
Description | Units Per Format | Available |