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MMRF5014HR5

RF Power Transistor from NXP

RF Power Transistor,1 to 2700 MHz, 125 W, Typ Gain in dB is 16 @ 2500 MHz, 50 V, GaN, SOT1791

Status: Featured | Data Sheet:

| RoHS Compliance: Rohs Compliant

This 125 W RF power GaN transistor from NXP Semiconductors is suitable for designing wideband amplifiers for frequencies up to 2700MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications for linear and compressed amplifier circuits. It includes input matching for extended bandwidth performance and is ideally suited for CW or pulse modulations.

Features:

Advanced GaN on SiC, offering high power density
Suitable for octave and decade bandwidth wideband amplifiers
Input matched for extended wideband performance
High ruggedness: 20:1 VSWR
Low Thermal Resistance
Wideband reference circuit for 200-2500 MHz

Typical Applications:

Ideal for military end-use applications, including the following:
- Narrowband and multi--octave wideband amplifiers
- Radar
- Jammers
- EMC testing
Also suitable for commercial applications, including the following:
- Public mobile radios, including emergency service radios
- Industrial, scientific and medical
- Wideband, high power laboratory amplifiers
- Wireless cellular infrastructure

Part Number: MMRF5014HR5
Manufacturer: NXP
Frequency Min: 0.001 GHz
Frequency Max: 2.7 GHz
Output Power: 125 W
Gain: 16 dB
% Typ Efficiency: 64.2
Supply Voltage: 50 V
Package: SOT1791
Process: GaN
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	MMRF5014H/RFPOWERDEMO NXP	Evaluation Board for MMRF5014H
Complementary Product	MMRF5017HSR5 NXP	RF Power Transistor, 0.03 to 2.2 GHz, 125 W CW, 50 V, SOT1828-1, GaN

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Product Specifications For MMRF5014HR5 RF Power Transistor

Part Number: MMRF5014HR5 Manufacturer: NXP Product Description: RF Power Transistor,1 to 2700 MHz, 125 W, Typ Gain in dB is 16 @ 2500 MHz, 50 V, GaN, SOT1791

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MMRF5014HR5

RF Power Transistor from NXP

RF Power Transistor,1 to 2700 MHz, 125 W, Typ Gain in dB is 16 @ 2500 MHz, 50 V, GaN, SOT1791

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MMRF5014HR5

RF Power Transistor from NXP

RF Power Transistor,1 to 2700 MHz, 125 W, Typ Gain in dB is 16 @ 2500 MHz, 50 V, GaN, SOT1791

Technical Inquiry Request for MMRF5014HR5 RF Power Transistor

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