Part number MMRF5017HSR5 Product Type RF Power Transistor from Manufacturer NXP

Status: Discontinued | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant

This 125 W RF power GaN transistor from NXP Semiconductors is capable of broadband operation from 30 to 2200 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and broadband RF applications.
The MMRF5017HS is characterized and performance is guaranteed for applications operating in the 30 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

Features:

  • Advanced GaN on SiC, offering high power density
  • Decade bandwidth performance
  • Input matched for extended wideband performance
  • High ruggedness: > 10:1 VSWR

Typical Applications:

  • Ideal for military end--use applications, including the following:
    • Narrowband and multi--octave wideband amplifiers
    • Radar
    • Jammers
    • EMCtesting
  • Also suitable for commercial applications, including the following:
    • Public mobile radios, including emergency service radios
    • Industrial, scientific and medical
    • Wideband laboratory amplifiers
    • Wireless cellular infrastructure
Part Number:
MMRF5017HSR5
Manufacturer:
NXP
Frequency Min:
0.03 GHz
Frequency Max:
2.2 GHz
Output Power:
125 W
% Typ Efficiency:
59.1
Supply Voltage:
50 V
Package:
SOT1828-1
Process:
GaN
Type:
RF Power Discrete Transistors
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Replacement Part(s) Suggested

The part MMRF5017HSR5 is discontinued, below is the suggested replacement part.

Part Number Manufacturer Description
MMRF5018HSR5 NXP RF Power Transistor, 0.001 to 2.7 GHz, 125 W, 12 dB, 50 V, GaN