This 125 W RF power GaN transistor from NXP Semiconductors is capable of broadband operation from 30 to 2200 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and broadband RF applications.
The MMRF5017HS is characterized and performance is guaranteed for applications operating in the 30 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Features:
Typical Applications:
Part Number:
MMRF5017HSR5
|
Manufacturer:
NXP
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Frequency Min:
0.03 GHz
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Frequency Max:
2.2 GHz
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Output Power:
125 W
|
% Typ Efficiency:
59.1
|
Supply Voltage:
50 V
|
Package:
SOT1828-1
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Process:
GaN
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Type:
RF Power Discrete Transistors
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Description | Units Per Format | Available |
Description | Units Per Format | Available |