Part number MRF101AN Product Type RF Power Transistor from Manufacturer NXP

Status: No new designs | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant

These NXP wideband RF power LDMOS Transistors are designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The devices are exceptionally rugged and exhibit high performance up to 250 MHz.

Features:

  • Mirror pinout versions (A and B) to simplify use in a push-pull, two-up configuration
  • Characterized from 30 to 50V
  • Suitable for linear application
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • Included in NXP product longevity program with assured supply for a minimum of 15 years after launch

Typical Applications:

  • Industrial, scientific, medical (ISM)
    • Laser generation
    • Plasma etching
    • Particle accelerators
    • MRI and other medical applications
    • Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast
  • HF and VHF communications
  • Switch mode power supplies
Part Number:
MRF101AN
Manufacturer:
NXP
Frequency Min:
0.0018 GHz
Frequency Max:
0.25 GHz
Output Power:
100 W
Gain:
23 dB
% Typ Efficiency:
79.5
Supply Voltage:
50 V
Package:
TO-220-3L
Process:
LDMOS
Type:
RF Power Discrete Transistors

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