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MRF101BN

RF Power Transistor from NXP

RF Power Transistor, 1.8 to 250 MHz, 100 W CW, Typ gain in dB is 23 @ 50 MHz, TO-220-3L, LDMOS

Status: No new designs | Data Sheet:

| RoHS Compliance: Rohs Compliant

Part Number: MRF101BN
Manufacturer: NXP
Frequency Min: 0.0018 GHz
Frequency Max: 0.25 GHz
Output Power: 100 W
Gain: 23 dB
% Typ Efficiency: 79.5
Supply Voltage: 50 V
Package: TO-220-3L
Process: LDMOS
Type: RF Power Discrete Transistors

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Product Specifications For MRF101BN RF Power Transistor

Part Number: MRF101BN Manufacturer: NXP Product Description: RF Power Transistor, 1.8 to 250 MHz, 100 W CW, Typ gain in dB is 23 @ 50 MHz, TO-220-3L, LDMOS

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Description	Units Per Format	Available

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MRF101BN

RF Power Transistor from NXP

RF Power Transistor, 1.8 to 250 MHz, 100 W CW, Typ gain in dB is 23 @ 50 MHz, TO-220-3L, LDMOS

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MRF101BN

RF Power Transistor from NXP

RF Power Transistor, 1.8 to 250 MHz, 100 W CW, Typ gain in dB is 23 @ 50 MHz, TO-220-3L, LDMOS

Technical Inquiry Request for MRF101BN RF Power Transistor

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