Part number MRF24G300HSR5 Product Type RF Power Transistor from Manufacturer NXP

Status: Discontinued | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant

MRF24G300HS combines the high efficiency of GaN with thermal behavior of SiC. 

• Characterized for CW, long pulse (up to several seconds) and short pulse operations
• Device can be used in a single-ended or push-pull configuration
• Input matched for simplified input circuitry
• Qualified up to 55 V
• Suitable for linear application
• Delivers 73% drain efficiency for 330 W at 2.45 GHz
• High efficiency and lower thermal resistance allow to dissipate less power while ensuring a cooler channel temperature
• GaN’s high power density combined to a high drain voltage ensure maximum power in small footprint

Target Applications: 

Industrial: 
 Industrial heating
 Welding and heat sealing
 Drying
 Plasma generation
 Lighting

Scientific instrumentation

Medical:
 Microwave ablation
 Diathermy

Cooking: 
 Microwave Oven

Part Number:
MRF24G300HSR5
Manufacturer:
NXP
Frequency Min:
2.4 GHz
Frequency Max:
2.5 GHz
Output Power:
300 W
Gain:
15.2 dB
% Typ Efficiency:
73
Supply Voltage:
50 V
Package:
NI-780S-4L
Process:
GaN
Type:
RF Power Discrete Transistors
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