MRF24G300HS combines the high efficiency of GaN with thermal behavior of SiC.
• Characterized for CW, long pulse (up to several seconds) and short pulse operations
• Device can be used in a single-ended or push-pull configuration
• Input matched for simplified input circuitry
• Qualified up to 55 V
• Suitable for linear application
• Delivers 73% drain efficiency for 330 W at 2.45 GHz
• High efficiency and lower thermal resistance allow to dissipate less power while ensuring a cooler channel temperature
• GaN’s high power density combined to a high drain voltage ensure maximum power in small footprint
Target Applications:
Industrial:
Industrial heating
Welding and heat sealing
Drying
Plasma generation
Lighting
Scientific instrumentation
Medical:
Microwave ablation
Diathermy
Cooking:
Microwave Oven
Part Number:
MRF24G300HSR5
|
Manufacturer:
NXP
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Frequency Min:
2.4 GHz
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Frequency Max:
2.5 GHz
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Output Power:
300 W
|
Gain:
15.2 dB
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% Typ Efficiency:
73
|
Supply Voltage:
50 V
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Package:
NI-780S-4L
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Process:
GaN
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Type:
RF Power Discrete Transistors
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Description | Units Per Format | Available |
Description | Units Per Format | Available |