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MRF300AN

RF Power Transistor from NXP

RF Power Transistor, 1.8 to 250 MHz, 300 W, 50 V, TO-247-3L, LDMOS

Status: No new designs | Data Sheet:

| RoHS Compliance: Rohs Compliant

These high ruggedness RF Power LDMOS Transistors from NXP are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 250 MHz.

Part Number: MRF300AN
Manufacturer: NXP
Frequency Min: 0.0018 GHz
Frequency Max: 0.25 GHz
Output Power: 300 W
Supply Voltage: 50 V
Package: TO-247-3L
Process: LDMOS
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	MRF300AN/RFPOWERDEMO NXP	Evaluation Board for MRF300AN
Complementary Product	MRF300BN NXP	RF Power Transistor, 1.8 to 250 MHz, 300 W, 50 V, TO-247-3L, LDMOS

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Product Specifications For MRF300AN RF Power Transistor

Part Number: MRF300AN Manufacturer: NXP Product Description: RF Power Transistor, 1.8 to 250 MHz, 300 W, 50 V, TO-247-3L, LDMOS

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Product may be included on Section 301 Tariff List and subject to applicable tariff charges.

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MRF300AN

RF Power Transistor from NXP

RF Power Transistor, 1.8 to 250 MHz, 300 W, 50 V, TO-247-3L, LDMOS

Technical Inquiry Request for MRF300AN RF Power Transistor

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MRF300AN

RF Power Transistor from NXP

RF Power Transistor, 1.8 to 250 MHz, 300 W, 50 V, TO-247-3L, LDMOS

Technical Inquiry Request for MRF300AN RF Power Transistor

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