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MRF300BN

RF Power Transistor from NXP

RF Power Transistor, 1.8 to 250 MHz, 300 W, 50 V, TO-247-3L, LDMOS

Status: No new designs | Data Sheet:

| RoHS Compliance: Rohs Compliant

These high ruggedness RF Power LDMOS Transistors from NXP are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 250 MHz.

Part Number: MRF300BN
Manufacturer: NXP
Frequency Min: 0.0018 GHz
Frequency Max: 0.25 GHz
Output Power: 300 W
Supply Voltage: 50 V
Package: TO-247-3L
Process: LDMOS
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Complementary Product	MRF300AN NXP	RF Power Transistor, 1.8 to 250 MHz, 300 W, 50 V, TO-247-3L, LDMOS

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Product Specifications For MRF300BN RF Power Transistor

Part Number: MRF300BN Manufacturer: NXP Product Description: RF Power Transistor, 1.8 to 250 MHz, 300 W, 50 V, TO-247-3L, LDMOS

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Tariff Notice

Product may be included on Section 301 Tariff List and subject to applicable tariff charges.

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Description	Units Per Format	Available

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MRF300BN

RF Power Transistor from NXP

RF Power Transistor, 1.8 to 250 MHz, 300 W, 50 V, TO-247-3L, LDMOS

Technical Inquiry Request for MRF300BN RF Power Transistor

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MRF300BN

RF Power Transistor from NXP

RF Power Transistor, 1.8 to 250 MHz, 300 W, 50 V, TO-247-3L, LDMOS

Technical Inquiry Request for MRF300BN RF Power Transistor

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