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MRF8S21100HSR3

RF Power Transistor from NXP

RF Power Transistor,2110 to 2170 MHz, 100 W, Typ Gain in dB is 18.3 @ 2170 MHz, 28 V, LDMOS, SOT1793

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

Part Number: MRF8S21100HSR3
Manufacturer: NXP
Frequency Min: 2.11 GHz
Frequency Max: 2.17 GHz
Output Power: 100 W
Gain: 18.3 dB
% Typ Efficiency: 33.4
Supply Voltage: 28 V
Package: SOT1793
Process: LDMOS
Type: RF Power Discrete Transistors

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Product Specifications For MRF8S21100HSR3 RF Power Transistor

Part Number: MRF8S21100HSR3 Manufacturer: NXP Product Description: RF Power Transistor,2110 to 2170 MHz, 100 W, Typ Gain in dB is 18.3 @ 2170 MHz, 28 V, LDMOS, SOT1793

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Description	Units Per Format	Available

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MRF8S21100HSR3

RF Power Transistor from NXP

RF Power Transistor,2110 to 2170 MHz, 100 W, Typ Gain in dB is 18.3 @ 2170 MHz, 28 V, LDMOS, SOT1793

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MRF8S21100HSR3

RF Power Transistor from NXP

RF Power Transistor,2110 to 2170 MHz, 100 W, Typ Gain in dB is 18.3 @ 2170 MHz, 28 V, LDMOS, SOT1793

Technical Inquiry Request for MRF8S21100HSR3 RF Power Transistor

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