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MRFE6VP8600HR5

RF Power Transistor from NXP

RF Power Transistor,470 to 860 MHz, 600 W, Typ Gain in dB is 19.3 @ 860 MHz, 50 V, LDMOS, SOT1787

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

Part Number: MRFE6VP8600HR5
Manufacturer: NXP
Frequency Min: 0.47 GHz
Frequency Max: 0.86 GHz
Output Power: 600 W
Gain: 19.3 dB
% Typ Efficiency: 30
Supply Voltage: 50 V
Package: SOT1787
Process: LDMOS
Avg Power: 125 W
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Replacement	MRFE8VP8600HR5 NXP	RF Power Transistor,470 to 860 MHz, - W, Typ Gain in dB is 20 @ 810 MHz, 50 V, LDMOS, SOT1787

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Product Specifications For MRFE6VP8600HR5 RF Power Transistor

Part Number: MRFE6VP8600HR5 Manufacturer: NXP Product Description: RF Power Transistor,470 to 860 MHz, 600 W, Typ Gain in dB is 19.3 @ 860 MHz, 50 V, LDMOS, SOT1787

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Description	Units Per Format	Available

Replacement Part(s) Suggested

The part MRFE6VP8600HR5 is discontinued, below is the suggested replacement part.

Part Number	Manufacturer	Description
MRFE8VP8600HR5	NXP	RF Power Transistor,470 to 860 MHz, - W, Typ Gain in dB is 20 @ 810 MHz, 50 V, LDMOS, SOT1787

Description	Units Per Format	Available

The part MRFE6VP8600HR5 is discontinued, would you like to check out the suggested replacement part?

Part Function	Part Number	Description
Replacement	MRFE8VP8600HR5 NXP	RF Power Transistor,470 to 860 MHz, - W, Typ Gain in dB is 20 @ 810 MHz, 50 V, LDMOS, SOT1787

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MRFE6VP8600HR5

RF Power Transistor from NXP

RF Power Transistor,470 to 860 MHz, 600 W, Typ Gain in dB is 19.3 @ 860 MHz, 50 V, LDMOS, SOT1787

Technical Inquiry Request for MRFE6VP8600HR5 RF Power Transistor

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MRFE6VP8600HR5

RF Power Transistor from NXP

RF Power Transistor,470 to 860 MHz, 600 W, Typ Gain in dB is 19.3 @ 860 MHz, 50 V, LDMOS, SOT1787

Technical Inquiry Request for MRFE6VP8600HR5 RF Power Transistor

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