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MRFX035HR5

RF Power Transistor from NXP

RF Power Transistor, 0.0018 to 0.512 GHz, 35 W, Typ. Gain in dB is 24.8 @ 230 MHz, 65 V, NI-360H-2SB, LDMOS

Status: No new designs | Data Sheet:

| RoHS Compliance: Rohs Compliant

Part Number: MRFX035HR5
Manufacturer: NXP
Frequency Min: 0.0018 GHz
Frequency Max: 0.512 GHz
Output Power: 35 W
Gain: 24.8 dB
% Typ Efficiency: 75.8
Supply Voltage: 65 V
Package: NI-360H-2SB
Process: LDMOS
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	MRFX035H-2MHZ NXP	Evaluation Board for MRFX035H, 1.8 to 54 MHz
Complementary Product	MMG3H21NT1 NXP	Amplifier, 0 to 6 GHz, 20.5 dBm, Typ. Gain in dB is 19.3 @ 900 MHz, 5 V, SOT-89A
Complementary Product	MRFX1K80HR5 NXP	RF Power Transistor, 1.8 to 400 MHz, 1800 W, Typ Gain in dB is 24 @ 230 MHz, 65 V, LDMOS, SOT1787-1
Complementary Product	MRFX1K80NR5 NXP	RF Power Transistor, 1.8 to 400 MHz, 1800 W, 65 V, SOT1816-1, LDMOS
Complementary Product	MRFX600HR5 NXP	RF Power Transistor, 1.8 to 400 MHz, 600 W CW, Typ Gain in dB is 26.4 @ 230 MHz, 65 V, NI-780H-4L, LDMOS
Complementary Product	MRFX600HSR5 NXP	RF Power Transistor, 1.8 to 400 MHz, 600 W CW, Typ Gain in dB is 26.4 @ 230 MHz, 65 V, NI-780S-4L, LDMOS

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Product Specifications For MRFX035HR5 RF Power Transistor

Part Number: MRFX035HR5 Manufacturer: NXP Product Description: RF Power Transistor, 0.0018 to 0.512 GHz, 35 W, Typ. Gain in dB is 24.8 @ 230 MHz, 65 V, NI-360H-2SB, LDMOS

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MRFX035HR5

RF Power Transistor from NXP

RF Power Transistor, 0.0018 to 0.512 GHz, 35 W, Typ. Gain in dB is 24.8 @ 230 MHz, 65 V, NI-360H-2SB, LDMOS

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MRFX035HR5

RF Power Transistor from NXP

RF Power Transistor, 0.0018 to 0.512 GHz, 35 W, Typ. Gain in dB is 24.8 @ 230 MHz, 65 V, NI-360H-2SB, LDMOS

Technical Inquiry Request for MRFX035HR5 RF Power Transistor

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