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MRFX1K80HR5

RF Power Transistor from NXP

RF Power Transistor, 1.8 to 400 MHz, 1800 W, Typ Gain in dB is 24 @ 230 MHz, 65 V, LDMOS, SOT1787-1

Status: No new designs | Data Sheet:

| RoHS Compliance: Rohs Compliant

MRFX1K80H: 1800 W CW over 1.8-470 MHz, 65 V Wideband RF Power LDMOS Transistor

Based on NXP's new 65 V LDMOS technology, the MRFX1K80H focuses on ease of use. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 470 MHz.

The MRFX1K80H is pin-compatible (same PCB) with its plastic version MRFX1K80N, with MRFE6VP61K25H and MRFE6VP61K25N (1250 W @ 50 V), and with MRF1K50H and MRF1K50N (1500 W @ 50 V).

Part Number: MRFX1K80HR5
Manufacturer: NXP
Frequency Min: 0.0018 GHz
Frequency Max: 0.4 GHz
Output Power: 1800 W
Gain: 24 dB
% Typ Efficiency: 74
Supply Voltage: 65 V
Package: SOT1787-1
Process: LDMOS
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	MRFX1K80H/RFPOWERDEMO NXP	Evaluation Board for MRFX1K80H
Evaluation Board	MRFX1K80H-128MHZ NXP	Evaluation Board for MRFX1K80H, 128 MHz
Evaluation Board	MRFX1K80H-175MHZ NXP	Evaluation Board for MRFX1K80H, 175 MHz
Evaluation Board	MRFX1K80H-230MHZ NXP	Evaluation Board for MRFX1K80H, 230 MHz
Evaluation Board	MRFX1K80H-27MHZ NXP	Evaluation Board for MRFX1K80H, 27 MHz
Evaluation Board	MRFX1K80H-64MHZ NXP	Evaluation Board for MRFX1K80H, 64 MHz
Evaluation Board	MRFX1K80H-81MHZ NXP	Evaluation Board for MRFX1K80H, 81 MHz
Evaluation Board	MRFX1K80H-88MHZ NXP	Evaluation Board for MRFX1K80H, 88 MHz
Evaluation Board	MRFX1K80H-VHFDHY NXP	Evaluation Board for MRFX1K80H, 174 to 230 MHz Doherty
Complementary Product	MMG3H21NT1 NXP	Amplifier, 0 to 6 GHz, 20.5 dBm, Typ. Gain in dB is 19.3 @ 900 MHz, 5 V, SOT-89A
Complementary Product	MRFX035HR5 NXP	RF Power Transistor, 0.0018 to 0.512 GHz, 35 W, Typ. Gain in dB is 24.8 @ 230 MHz, 65 V, NI-360H-2SB, LDMOS

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Product Specifications For MRFX1K80HR5 RF Power Transistor

Part Number: MRFX1K80HR5 Manufacturer: NXP Product Description: RF Power Transistor, 1.8 to 400 MHz, 1800 W, Typ Gain in dB is 24 @ 230 MHz, 65 V, LDMOS, SOT1787-1

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MRFX1K80HR5

RF Power Transistor from NXP

RF Power Transistor, 1.8 to 400 MHz, 1800 W, Typ Gain in dB is 24 @ 230 MHz, 65 V, LDMOS, SOT1787-1

Technical Inquiry Request for MRFX1K80HR5 RF Power Transistor

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MRFX1K80HR5

RF Power Transistor from NXP

RF Power Transistor, 1.8 to 400 MHz, 1800 W, Typ Gain in dB is 24 @ 230 MHz, 65 V, LDMOS, SOT1787-1

Technical Inquiry Request for MRFX1K80HR5 RF Power Transistor

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