Part number MRFX1K80NR5 Product Type RF Power Transistor from Manufacturer NXP

Status: No new designs | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant
MRFX1K80N: 1800 W CW over 1.8-470 MHz, 65 V Wideband RF Power LDMOS Transistor

The MRFX1K80N is the over-molded plastic version of MRFX1K80H and will typically enable a 30% lower thermal resistance. It is based on NXP's new 65 V LDMOS technology that focuses on ease of use. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 470 MHz.

The MRFX1K80N is pin-compatible (same PCB) with its ceramic version MRFX1K80H, with MRFE6VP61K25H and MRFE6VP61K25N (1250 W @ 50 V), and with MRF1K50H and MRF1K50N (1500 W @ 50 V).
Part Number:
MRFX1K80NR5
Manufacturer:
NXP
Frequency Min:
0.0018 GHz
Frequency Max:
0.4 GHz
Output Power:
1800 W
Gain:
24.4 dB
% Typ Efficiency:
75.7
Supply Voltage:
65 V
Package:
SOT1816-1
Process:
LDMOS
Type:
RF Power Discrete Transistors
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