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MRFX600HR5

RF Power Transistor from NXP

RF Power Transistor, 1.8 to 400 MHz, 600 W CW, Typ Gain in dB is 26.4 @ 230 MHz, 65 V, NI-780H-4L, LDMOS

Status: No new designs | Data Sheet:

| RoHS Compliance: Rohs Compliant

Part Number: MRFX600HR5
Manufacturer: NXP
Frequency Min: 0.0018 GHz
Frequency Max: 0.4 GHz
Output Power: 600 W
Gain: 26.4 dB
% Typ Efficiency: 74.4
Supply Voltage: 65 V
Package: NI-780H-4L
Process: LDMOS
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	MRFX600H/RFPOWERDEMO NXP	Evaluation Board for MRFX600H
Complementary Product	MMG3H21NT1 NXP	Amplifier, 0 to 6 GHz, 20.5 dBm, Typ. Gain in dB is 19.3 @ 900 MHz, 5 V, SOT-89A
Complementary Product	MRFX035HR5 NXP	RF Power Transistor, 0.0018 to 0.512 GHz, 35 W, Typ. Gain in dB is 24.8 @ 230 MHz, 65 V, NI-360H-2SB, LDMOS

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Product Specifications For MRFX600HR5 RF Power Transistor

Part Number: MRFX600HR5 Manufacturer: NXP Product Description: RF Power Transistor, 1.8 to 400 MHz, 600 W CW, Typ Gain in dB is 26.4 @ 230 MHz, 65 V, NI-780H-4L, LDMOS

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MRFX600HR5

RF Power Transistor from NXP

RF Power Transistor, 1.8 to 400 MHz, 600 W CW, Typ Gain in dB is 26.4 @ 230 MHz, 65 V, NI-780H-4L, LDMOS

Technical Inquiry Request for MRFX600HR5 RF Power Transistor

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MRFX600HR5

RF Power Transistor from NXP

RF Power Transistor, 1.8 to 400 MHz, 600 W CW, Typ Gain in dB is 26.4 @ 230 MHz, 65 V, NI-780H-4L, LDMOS

Technical Inquiry Request for MRFX600HR5 RF Power Transistor

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