 
                Qorvo's QPA1314 is a packaged high power MMIC amplifier, fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). QPA1314 is targeted for 13.75 – 14.5 GHz Satcom band. Linear power is 20 W with 25 dBc third order intermodulation distortion products. It provides 40 W of output power with 27 dB of large signal gain while achieving 30% power-added efficiency. Operating frequency can extend to 12.75 – 15.35 GHz if desired.
The QPA1314 is packaged in a 10-lead 15 x 15 mm bolt-down with a Cu base for superior thermal management. To simplify system integration, the QPA1314 is fully matched to 50 ohms with DC grounded I/O ports for optimum ESD performance.
The QPA1314 is ideal for supporting communications and radar applications in both commercial and military markets.
The QPA1314 is 100% DC and RF tested to ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
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                                                        Part Number:
                                                     
                                                        QPA1314
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                                                        Manufacturer:
                                                     
                                                        Qorvo
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                                                        Export Status:
                                                       | 
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                                                        Type:
                                                     
                                                        MMIC Amplifiers
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                                                        Frequency Min:
                                                     
                                                        13.75 GHz
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                                                        Frequency Max:
                                                     
                                                        14.5 GHz
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                                                        Psat:
                                                     
                                                        46 dBm
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                                                        Gain:
                                                     
                                                        29 dB
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                                                        Supply Voltage \ Vd Min:
                                                     
                                                        24 V
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                                                        Quiescent Current \ Id:
                                                     
                                                        680 mA
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                                                        Package:
                                                     
                                                        15.24 x 15.24 x 3.51 mm
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                                                        Power Added Efficiency:
                                                     
                                                        30 %
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                                                        Process:
                                                     
                                                        GaN on SiC
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| Description | Units Per Format | Available | 
| Description | Units Per Format | Available |