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QPD0305

Model Number: QPD0305

RF Power Transistor from Qorvo

RF Power Transistor, 3.4 to 3.8 GHz, 20 dB, DFN overmold package

Status: Discontinued | Data Sheet:

| RoHS Compliance:

The QPD0305 is a dual-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 3.4 to 3.8 GHz. In each path is a single-stage amplifier transistor.

QPD0305 can deliver PSAT of 22.5 W at +48 V operation through each path.

Lead free and RoHS compliant.

Part Number: QPD0305
Manufacturer: Qorvo
Frequency Min: 3.4 GHz
Frequency Max: 3.8 GHz
Output Power: 22.5 W
Gain: 20 dB
% Typ Efficiency: 75.9
Supply Voltage: 48 V
Package: DFN
Process: GaN HEMT
Type: RF Power Discrete Transistors

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Product may be included on Section 301 Tariff List and subject to applicable tariff charges.

Part Function	Part Number	Description
Evaluation Board	QPD0305EVB2 Qorvo	Evaluation Board for QPD0305

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Product Specifications For QPD0305 RF Power Transistor

Part Number: QPD0305 Manufacturer: Qorvo Product Description: RF Power Transistor, 3.4 to 3.8 GHz, 20 dB, DFN overmold package

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Tariff Notice

Product may be included on Section 301 Tariff List and subject to applicable tariff charges.

Description	Units Per Format	Available

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QPD0305

RF Power Transistor from Qorvo

RF Power Transistor, 3.4 to 3.8 GHz, 20 dB, DFN overmold package

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QPD0305

RF Power Transistor from Qorvo

RF Power Transistor, 3.4 to 3.8 GHz, 20 dB, DFN overmold package

Technical Inquiry Request for QPD0305 RF Power Transistor

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