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QPD0405

RF Power Transistor from Qorvo

RF Power Transistor, 4.4 to 5.0 GHz, 15.4 dB, DFN overmold package

Status: Discontinued | Datasheet: Request Data Sheet | RoHS Compliance: Rohs Compliant

The QPD0405 is a dual-path discrete GaN on SiC HEMT in a DFN package which operates from 4.4 to 5.0 GHz. In each path is a single-stage amplifier transistor.

The QPD0405 can deliver PSAT of 22 W at +48 V operation through each path.

RoHS compliant.

Part Number: QPD0405
Manufacturer: Qorvo
Frequency Min: 4.4 GHz
Frequency Max: 5 GHz
Output Power: 22 W
Gain: 15.4 dB
Supply Voltage: 48 V
Package: DFN
Process: GaN HEMT
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	QPD0405EVB Qorvo	Evaluation Board for QPD0405

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Product Specifications For QPD0405 RF Power Transistor

Part Number: QPD0405 Manufacturer: Qorvo Product Description: RF Power Transistor, 4.4 to 5.0 GHz, 15.4 dB, DFN overmold package

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QPD0405

RF Power Transistor from Qorvo

RF Power Transistor, 4.4 to 5.0 GHz, 15.4 dB, DFN overmold package

Technical Inquiry Request for QPD0405 RF Power Transistor

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QPD0405

RF Power Transistor from Qorvo

RF Power Transistor, 4.4 to 5.0 GHz, 15.4 dB, DFN overmold package

Technical Inquiry Request for QPD0405 RF Power Transistor

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