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QPD1006

Model Number: QPD1006

RF Power Transistor from Qorvo

RF Transistor, GaN, 1.2 to 1.4 GHz, 450 W, 50 V, Ni50-CW, 19 x 17.68

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 Ω in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and CW operations.

ROHS compliant.

Part Number: QPD1006
Manufacturer: Qorvo
Frequency Min: 1.2 GHz
Frequency Max: 1.4 GHz
Output Power: 450 W
Gain: 17.5 dB
Package: Ni50-CW
Process: GaN
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	QPD1006EVB4 Qorvo	Evaluation Board for QPD1006

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Product Specifications For QPD1006 RF Power Transistor

Part Number: QPD1006 Manufacturer: Qorvo Product Description: RF Transistor, GaN, 1.2 to 1.4 GHz, 450 W, 50 V, Ni50-CW, 19 x 17.68

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QPD1006

RF Power Transistor from Qorvo

RF Transistor, GaN, 1.2 to 1.4 GHz, 450 W, 50 V, Ni50-CW, 19 x 17.68

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QPD1006

RF Power Transistor from Qorvo

RF Transistor, GaN, 1.2 to 1.4 GHz, 450 W, 50 V, Ni50-CW, 19 x 17.68

Technical Inquiry Request for QPD1006 RF Power Transistor

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