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QPD1022

Model Number: QPD1022

RF Power Transistor from Qorvo

RF Transistor, DC - 12 GHz, 24 dB, 10 W, 32 V, GaN, 3 x 3 mm, QFN

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.

The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Lead-free and ROHS compliant. Evaluation boards are available upon request.

Part Number: QPD1022
Manufacturer: Qorvo
Frequency Min: 0 GHz
Frequency Max: 12 GHz
Output Power: 10 W
Gain: 24 dB
% Typ Efficiency: 68.8
Supply Voltage: 32 V
Id: 50 mA
Package: QFN 3 x 3 mm
Process: GaN
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-QPD1022-001

Part Function	Part Number	Description
Evaluation Board	QPD1022EVB01 Qorvo	Evaluation Board for QPD1022 3.1 - 3.5 GHz
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	620EP2R0AL20 XSYSTOR Inc.	Evaluation Board, Controller, Switch
Complementary Product	735E22R0 XSYSTOR Inc.	Evaluation Board, Controller, Switch
Complementary Product	795EP2R0 XSYSTOR Inc.	Evaluation Board

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Product Specifications For QPD1022 RF Power Transistor

Part Number: QPD1022 Manufacturer: Qorvo Product Description: RF Transistor, DC - 12 GHz, 24 dB, 10 W, 32 V, GaN, 3 x 3 mm, QFN

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Description	Units Per Format	Available

Description	Units Per Format	Available

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QPD1022

RF Power Transistor from Qorvo

RF Transistor, DC - 12 GHz, 24 dB, 10 W, 32 V, GaN, 3 x 3 mm, QFN

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QPD1022

RF Power Transistor from Qorvo

RF Transistor, DC - 12 GHz, 24 dB, 10 W, 32 V, GaN, 3 x 3 mm, QFN

Technical Inquiry Request for QPD1022 RF Power Transistor

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