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QPD2040D

Model Number: QPD2040

RF Power Transistor from Qorvo

RF Power Transistor, GaAs pHEMT, DC- 20 GHz, 13 dB, 26 dBm, DIE

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

Qorvo's QPD2040D is a discrete 400-micron pHEMT which operates from DC to 20 GHz. The QPD2040D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2040D typically provides 26 dBm of output power at P1dB with gain of 13 dB and 55% power-added efficiency at 1 dB compression. This performance makes the QPD2040D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.

Part Number: QPD2040D
Manufacturer: Qorvo
Frequency Min: 0 GHz
Frequency Max: 20 GHz
Gain: 13 dB
% Typ Efficiency: 55
Supply Voltage: 8 V
Id: 65 mA
Package: DIE
Process: GaAs
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-QPD2040D-001

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Product Specifications For QPD2040D RF Power Transistor

Part Number: QPD2040D Manufacturer: Qorvo Product Description: RF Power Transistor, GaAs pHEMT, DC- 20 GHz, 13 dB, 26 dBm, DIE

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by 11/21/2025

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Description	Units Per Format	Available

Description	Units Per Format	Available

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QPD2040D

RF Power Transistor from Qorvo

RF Power Transistor, GaAs pHEMT, DC- 20 GHz, 13 dB, 26 dBm, DIE

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QPD2040D

RF Power Transistor from Qorvo

RF Power Transistor, GaAs pHEMT, DC- 20 GHz, 13 dB, 26 dBm, DIE

Technical Inquiry Request for QPD2040D RF Power Transistor

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