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QPD2560L

Model Number: QPD2560L

RF Power Transistor from Qorvo

RF Power Transistor, 1.0 to 1.5 GHz, 14.5 dB, 50V, NI-650 pkg

Status: Featured | Data Sheet:

| RoHS Compliance: Rohs Compliant

The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations.

Evaluation boards are available upon request.

Part Number: QPD2560L
Manufacturer: Qorvo
Frequency Min: 1 GHz
Frequency Max: 1.5 GHz
Output Power: 300 W
Gain: 15 dB
% Typ Efficiency: 65
Supply Voltage: 50 V
Package: NI-650
Process: GaN HEMT
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	QPD2560LEVB Qorvo	Evaluation Board for QPD2560L

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Product Specifications For QPD2560L RF Power Transistor

Part Number: QPD2560L Manufacturer: Qorvo Product Description: RF Power Transistor, 1.0 to 1.5 GHz, 14.5 dB, 50V, NI-650 pkg

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QPD2560L

RF Power Transistor from Qorvo

RF Power Transistor, 1.0 to 1.5 GHz, 14.5 dB, 50V, NI-650 pkg

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QPD2560L

RF Power Transistor from Qorvo

RF Power Transistor, 1.0 to 1.5 GHz, 14.5 dB, 50V, NI-650 pkg

Technical Inquiry Request for QPD2560L RF Power Transistor

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